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Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.

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Fundamentals of Modern VLSI Devices : Yuan Taur :

Amazon Second Chance Pass it on, trade it in, give it a second life. Goodreads helps you keep track of books you want to fuhdamentals. Gerald marked it as to-read Jul 22, Read more Read less.

Discover Prime Book Box for Kids. The approach is first-order analytical, with refrainment from the use of computer-simulations tools that would have fundsmentals the risk of diminishing the teaching strength of the book.

A better physical model can be developed. Thanks for telling us about the problem. Customers who viewed this item also viewed. Book Falcons rated it liked it Feb 18, What other items do customers buy after viewing this item? Xiuqi added it Oct 26, Solid State Electronic Devices 7th Edition.

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Diego Nahuel marked it as to-read Aug 11, The optimization of these devices for VLSI applications is also covered. The problems at the end of each chapter are carefully designed and serve to help the readers better understand the key concepts. Sneha Revankar marked it as to-read Nov 08, I strongly recommend this book as a text or a reference in semiconductor device courses. If you are a seller for this product, would you like to suggest updates through seller support? Mohamedmagdy marked it as to-read Apr 11, Each chapter concludes with real-life exercises that actually extend the depth of analysis, getting the reader directly involved.

Table of contents 1. Mayee marked it as to-read Apr 16, This makes the book invaluably useful in practical transitor design as well as in the classroom.

If you seek to understand devices from a physical point of view this book just fails to live up to it.

Fundamentals of Modern VLSI Devices

I must revise my previous comment about this book. Return to Book Page. What this book does best is to show all the relevant aspects in device physics and add proper amount of equation to make explanation.

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Amazon Inspire Digital Educational Resources. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices. So the total is 3 or 3. The treatment of the subject matter is outstandingly thorough, covering the basic device physics and technology integration of bipolar and field-effect metal-oxide-semiconductor MOSFET and highlighting the subtle tradeoffs involved in modern transistor design and optimization.

Want to Read saving…. I am not sure if this is the reason why the price of hardcover is slash down to close to the paperback. I always buy hardcover version book if I think the author is authoritive in the field and the content and writing is very good. The typesetting and diagrams are superb. I learn a lot after I finish the first round of read of this book. Share your thoughts with other customers.