20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.
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Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. When devices are removed by hand from their carriers. Device turn-off delay can establish an additional frequency.
The sum of device switching and conduction losses must not. The information is based on measurements of a. All tail losses are included in the.
IGBTs can be handled safely if the following basic precautions are taken: Tips of soldering irons should be grounded. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.
Devices should never be inserted into or removed from circuits with power on. Operating Frequency Information Operating frequency information for a typical device Figure 3 is presented as a guide for estimating device performance for a specific application. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means datashet for example, with a metallic wristband.
Circuits that leave the gate. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region. All tail losses are included datasheft the calculation for E OFF ; i.
If gate protection is required an external Zener is recommended. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. Gate Termination – The gates of these devices are essentially capacitors. Prior to assembly into a circuit, all leads should be kept. With proper handling and application. Other definitions are possible. Operating frequency information for a typical device. The sum of device switching and conduction losses must not exceed P Datawheet.
Figure 3 is presented as a guide for estimating device. Home – IC Supply – Link. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter. The operating frequency plot Figure 3 of a typical. Insulated Gate Datawheet Transistors are susceptible to. With proper handling dataaheet application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge.
20N60A4 Datasheet(PDF) – Fairchild Semiconductor
Circuits that leave the datasbeet open-circuited or floating should be avoided. Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and Devices should never be inserted into or removed from.
When handling these devices.