30G Datasheet: GT45F IGBT V TOF, 30G PDF VIEW Download Toshiba, 30G 1 page Datasheet PDF, Pinouts, Data Sheet, Equivalent. Toshiba 30G Datasheet: GT45F IGBT V TOF, 30G Datasheet , 30G PDF, Datasheets PDF 30G, Pinout, Data Sheet, Circuits. Symbol. Min. Typ. Max. Units. BVCES. -. -. V. IGES. -. -. ± nA. ICES. -. -. 1. mA. VCE(sat). -. 3. V. -. -. V. VGE(th). 3. 7. V. Qg. -. nC.
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Seller assumes all responsibility for this listing. The conductivity datasbeet characteristics of a bipolar transistor make it ideal for load control applications that require high breakdown voltage and high current. Covers your purchase price and original shipping. Resume making your offerif the page does not update immediately. Have one to sell?
30G121, 30G122, 30G6P44
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In Stock Can ship immediately Price: Include your shipping address and preferred shipping method. Shipping cost cannot be calculated. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in datashheet. With 11 years datqsheet professional experience in distribution in this area, we own a big and professional sale team with members from all over the world.
30G Datasheet, 30G PDF, Pinouts, Circuit – Toshiba
Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques. We boast our competitive prices and short lead time. Add to watch list Remove from watch list. Relevancy Transaction Level Response Rate. Subject to credit approval. Minimum monthly payments are required. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply UPS systems, IH dstasheet, plasma display panels PDPsstrobe flashes and so on.
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No additional import charges at delivery! However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases.
F 30G122 TO-220
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30G Datasheet PDF – Toshiba
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