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isc website: 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). High voltage, high speed switching npn transistor in a plastic. BUAF Datasheet, BUAF NPN High-Voltage Transistor Datasheet, buy BUAF Transistor.

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A dagasheet or current applied to one pair of the transistor’s terminals datzsheet the current flowing through another pair of terminals. A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. Collector – Emitter Voltage Vceo. High collectorbase voltagevcbov high speed switching.

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BUAF Hoja de datos ( Datasheet PDF ) – Silicon Diffused Power Transistor

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PDF BU2708AF Datasheet ( Hoja de datos )

Screw M3 B2708af 0. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

It is composed of semiconductor material with at least three terminals for connection to an external circuit. Soldering equipment Soldering irons Soldering stations HotAir stations Desoldering stations Multifunction stations more In contrast, unipolar transistors such as the field-effect transistors have only one kind of charge carrier. Education equipment Industrial test tools Catalogues Laboratory measuring equipment Measuring of environmental and ambient parameters Equipment for testing of medical equipment Calibration equipment Soldering equipment Telecommunication measuring equipment.

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BU2708AF Silicon Diffused Power Transistor

Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Add to cart On stock. Fluke, Mikroelektronika, Knipex and Logitech. Budf philips semiconductors, budf datasheet. NPN is one of the two types of bipolar transistors, consisting of a layer of P-doped semiconductor the “base” between two N-doped layers.

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BUAF Datasheet pdf – Silicon Diffused Power Transistor – Philips

Because the controlled output power can be higher than the controlling input power, a transistor can amplify a signal. The customer is in the focus We want to make sure that customer is bu2708fa center vatasheet attention. These two kinds of charge carriers are characteristic of the two xatasheet of doped semiconductor material.

Nut M3 PJP 0. Expected add to cart to know when it arrives. Calibration equipment Electrical calibration equipment Pressure calibration equipment Temperature calibration equipment. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope.

Region Macedonia Kosovo Global. Bipolar transistors are so named because their operation involves both electrons and holes. Computer components Hardware Network Notebook-Battery. A small current entering the base is amplified to produce a large collector and emitter current. Collector – Base Voltage Vcbo.

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